Tez No	İndirme	Tez Künye	Durumu
461951		An analytical method for the accurate and effective thermal modelling of AlGaN/GaN hemts / Doğru ve verimli AlGaN/GaN hemt ısıl modellenmesi için geliştirilmiş analitik model Yazar:MOHAMMAD AZARIFAR Danışman: Assist. Prof. Dr. FATMA NAZLI DÖNMEZER AKGÜN Yer Bilgisi: Orta Doğu Teknik Üniversitesi / Fen Bilimleri Enstitüsü / Makine Mühendisliği Ana Bilim Dalı Konu:Makine Mühendisliği = Mechanical Engineering Dizin:	Onaylandı Yüksek Lisans İngilizce 2017 107 s.
AlGaN/GaN high electron mobility transistors (HEMTs) are popular solid-state electronic devices used for high power and frequency applications. Concerns exist about their reliability and performance due to harsh self-heating effects, which makes it necessary to correctly characterize their thermal performance. In the past many researchers used thermal modelling approaches for thermal characterization since variety of limiting factors still exist in the experimental measurements. In this study diversities and important parameters in various thermal models are investigated to provide a roadmap for the future thermal models. In addition, an analytical solution technique with high efficiency and accuracy is introduced for the correction of 2D models and for fast parametric thermal studies of HEMT devices. Using this analytical technique comprehensive thermal performance comparison of GaN-on-SiC and GaN-on-diamond for various device geometries and operating conditions is also performed.
AlGaN/GaN high electron mobility transistors (HEMTs) are popular solid-state electronic devices used for high power and frequency applications. Concerns exist about their reliability and performance due to harsh self-heating effects, which makes it necessary to correctly characterize their thermal performance. In the past many researchers used thermal modelling approaches for thermal characterization since variety of limiting factors still exist in the experimental measurements. In this study diversities and important parameters in various thermal models are investigated to provide a roadmap for the future thermal models. In addition, an analytical solution technique with high efficiency and accuracy is introduced for the correction of 2D models and for fast parametric thermal studies of HEMT devices. Using this analytical technique comprehensive thermal performance comparison of GaN-on-SiC and GaN-on-diamond for various device geometries and operating conditions is also performed.